Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films
Identifieur interne : 001571 ( Main/Exploration ); précédent : 001570; suivant : 001572Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films
Auteurs : M. Dongol [Égypte] ; M. M. El-Nahass [Égypte] ; M. Abou-Zied [Égypte] ; A. El-Denglawey [Égypte]Source :
- EPJ. Applied physics : (Print) [ 1286-0042 ] ; 2007.
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- Pascal (Inist)
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Abstract
Thermal evaporation technique was used to prepare As20Se80-xTlx films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As20Se80-xTlx films. TEP activation energy, ΔEs could be calculated from TEP measurements. It was found that ΔEs decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔEQ could be calculated.
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Dongol</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>83523, Qena</wicri:noRegion></affiliation></author><author><name sortKey="El Nahass, M M" sort="El Nahass, M M" uniqKey="El Nahass M" first="M. M." last="El-Nahass">M. M. El-Nahass</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physics Department Faculty of Education Ain Shams University</s1><s2>Cairo</s2><s3>EGY</s3><sZ>2 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Physics Department Faculty of Education Ain Shams University</wicri:noRegion></affiliation></author><author><name sortKey="Abou Zied, M" sort="Abou Zied, M" uniqKey="Abou Zied M" first="M." last="Abou-Zied">M. Abou-Zied</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>83523, Qena</wicri:noRegion></affiliation></author><author><name sortKey="El Denglawey, A" sort="El Denglawey, A" uniqKey="El Denglawey A" first="A." last="El-Denglawey">A. El-Denglawey</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>83523, Qena</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">EPJ. Applied physics : (Print)</title><title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title><idno type="ISSN">1286-0042</idno><imprint><date when="2007">2007</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">EPJ. Applied physics : (Print)</title><title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title><idno type="ISSN">1286-0042</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous semiconductors</term><term>Arsenic selenides</term><term>Chalcogenide glasses</term><term>Doped materials</term><term>Quantity ratio</term><term>Semiconductor materials</term><term>Ternary compounds</term><term>Thermoelectric properties</term><term>Thulium additions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur amorphe</term><term>Matériau dopé</term><term>Propriété thermoélectrique</term><term>Semiconducteur</term><term>Composé ternaire</term><term>Verre chalcogénure</term><term>Effet concentration</term><term>Arsenic séléniure</term><term>Addition thulium</term><term>6143D</term><term>7215J</term><term>7120G</term><term>As20Se(80-x)Tl(x)</term><term>As Se Tl</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thermal evaporation technique was used to prepare As<sub>20</sub>Se<sub>80-x</sub>Tl<sub>x</sub> films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As<sub>20</sub>Se<sub>80-x</sub>Tl<sub>x</sub> films. TEP activation energy, ΔE<sub>s</sub> could be calculated from TEP measurements. It was found that ΔE<sub>s</sub> decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE<sub>Q</sub> could be calculated.</div></front></TEI><affiliations><list><country><li>Égypte</li></country></list><tree><country name="Égypte"><noRegion><name sortKey="Dongol, M" sort="Dongol, M" uniqKey="Dongol M" first="M." last="Dongol">M. Dongol</name></noRegion><name sortKey="Abou Zied, M" sort="Abou Zied, M" uniqKey="Abou Zied M" first="M." last="Abou-Zied">M. Abou-Zied</name><name sortKey="El Denglawey, A" sort="El Denglawey, A" uniqKey="El Denglawey A" first="A." last="El-Denglawey">A. El-Denglawey</name><name sortKey="El Nahass, M M" sort="El Nahass, M M" uniqKey="El Nahass M" first="M. M." last="El-Nahass">M. M. El-Nahass</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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